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Effects of device scaling and geometry on MOS radiation hardness assurance

Conference ·
OSTI ID:10142232
; ;

MOS total-dose response is shown to depend strongly on transistor gate length. Simple scaling models cannot predict short-channel device response from long-channel results. Hardness assurance implications are discussed for weapon and space environments.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
10142232
Report Number(s):
SAND--93-0531C; CONF-930704--6; ON: DE93009832
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426000
440200
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE
450200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
ELECTRIC POTENTIAL
IRRADIATION
MOS TRANSISTORS
NUCLEAR EXPLOSIONS AND EXPLOSIVES
NUCLEAR WEAPONS
PHYSICAL RADIATION EFFECTS
QUALITY ASSURANCE
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
RADIATION HARDENING
SPACE