Temperature-Dependent Evolution of Chemisorbed Digermane in Ge Thin Film Growth
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States)
The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time-resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10123743
- Report Number(s):
- CONF-911202--59; ON: DE92008098
- Journal Information:
- MRS Online Proceedings Library, Journal Name: MRS Online Proceedings Library Vol. 237; ISSN 1946-4274; ISSN 0272-9172
- Publisher:
- Springer Science and Business Media LLC
- Country of Publication:
- United States
- Language:
- English
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