Real-time monitoring of a surface reaction in germanium film growth

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106870· OSTI ID:7043580

Eres, D ^[1]; Sharp, J W ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)
2. The University of Tennessee, Knoxville, Tennessee 37996 (United States)

Epitaxial germanium film growth by a surface reaction was investigated using a pulsed molecular jet. Time-resolved reflectometry was utilized for {ital in} {ital situ} monitoring of both the formation and the evolution of a chemisorbed layer of digermane. The rate of chemisorption was independent of temperature. Evolution of the adsorption layers occurred by a temperature dependent first order process, believed to be molecular hydrogen desorption. Digital growth of germanium films was demonstrated by periodically refilling the active surface sites liberated by molecular hydrogen desorption between two successive gas pulses. Epitaxial germanium films over 150 nm thick were grown on Si (100) substrates.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7043580
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:22; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHEMICAL REACTIONS
CHEMISORPTION
DESORPTION
ELEMENTS
EPITAXY
GERMANIUM
GROWTH
IRRADIATION
METALS
MOLECULAR BEAMS
OPTICAL REFLECTION
PULSED IRRADIATION
REAL TIME SYSTEMS
REFLECTION
SEPARATION PROCESSES
SORPTION