Investigation of the kinetics of surface-limited thin film growth of SiGe alloys
- Tennessee Univ., Knoxville, TN (United States). Dept. of Physics and Astronomy
- Oak Ridge National Lab., TN (United States)
The kinetics of surface-limited thin film growth of SiGe alloys was investigated by time-resolved surface differential reflectometry. The source gas, mixtures of disilane and digermane in ratios from 1:1 to 6:1 in helium carrier gas, was delivered to a heated substrate by a fast-acting pulsed molecular jet valve. The adsorption and desorption kinetics were determined from the surface differential reflectance signal obtained using a polarized, high-stability HeNe probe laser. Thin film growth was studied in the temperature range of 400--600{degrees}C on Si(001) substrates. Preferential incorporation of digermane into the film produces an alloy composition that depends upon but does not mirror the gas composition. For all gas mixtures, there is a strong temperature dependence of the rate at which the adsorption layer decomposes into film plus by-product. The kinetic data and the alloy compositions provide a basis for deducing some of the characteristics of the reaction sequence that leads to SiGe alloy thin film growth.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10117377
- Report Number(s):
- CONF-921101--36; ON: DE93005419
- Country of Publication:
- United States
- Language:
- English
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