Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Journal Article · Thu Nov 04 04:00:00 EDT 2010 · Applied Physics Letters

OSTI ID:1012373

Buchowicz, G; Stone, P R; Robinson, J T; Cress, C D; Beeman, J W; Dubon, O D

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 1012 cm-2 to 1015 cm-2 indicate that the structure of graphene evolves from a highly-ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1x1013 cm-2. A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1x1014 cm-2.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: Materials Sciences Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 1012373
• Report Number(s): LBNL-4421E
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
99 GENERAL AND MISCELLANEOUS
CARBON IONS
CHEMICAL VAPOR DEPOSITION
DEFECTS
FERMI LEVEL
IRRADIATION
RAMAN SPECTRA
SAPPHIRE
SCATTERING
SUBSTRATES
TRANSPORT