A method of producing high quality oxide and related films on surfaces
- Brookhaven National Lab., Upton, NY (United States)
- Rochester Univ., NY (United States). Dept. of Physics and Astronomy
Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Sloan (Alfred P.) Foundation, New York, NY (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10111081
- Report Number(s):
- BNL-46855; CONF-911231-4; ON: DE92005048
- Resource Relation:
- Conference: Technology 2001: 2nd national technology transfer conference and exposition,San Jose, CA (United States),3-5 Dec 1991; Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
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