The epitaxial growth of Ge on Si(100) using Te as a surfactant

Conference · Fri Oct 01 04:00:00 EDT 1993

OSTI ID:10105368

Yang, X; Wu, J ^[1]; Cao, R; Terry, J; Pianetta, P ^[1]; Li, J S ^[2]

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1. Stanford Linear Accelerator Center, Menlo Park, CA (United States)
2. Stanford Univ., CA (United States). Dept. of Materials Science and Engineering

Epitaxial growth of Ge on Si using Te as a surfactant was studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above {approximately} 450C), the Te coverage was less than the necessary coverage to keep the layer by layer growth, and the growth mode of Ge on Si is still S-K.

• Research Organization: Stanford Linear Accelerator Center, Menlo Park, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00515
• OSTI ID: 10105368
• Report Number(s): SLAC-PUB--6300; SLAC/SSRL--0041; CONF-930405--51; ON: DE94003437
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601
42 ENGINEERING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
EPITAXY
GERMANIUM
PREPARATION AND MANUFACTURE
SILICON
SUBSTRATES
TELLURIUM