Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Journal Article · Mon Apr 14 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4871283· OSTI ID:22273621

Shklyaev, A. A. ^[1]; Mashanov, V. I. ^[1]

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1. A.V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)

Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6 nm and they form arrays with the super-high density of (5–8) × 10{sup 12} cm{sup −2} at 1–2 nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.

• OSTI ID: 22273621
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL STRUCTURE
DENSITY
GERMANIUM
HOLES
MOLECULAR BEAM EPITAXY
POTENTIALS
QUANTUM DOTS
RAMAN SPECTROSCOPY
SCANNING TUNNELING MICROSCOPY
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE