X-ray scattering studies of surfactant mediated epitaxial growth of Si/Ge/Si(001) heterostructures

Journal Article · Fri Sep 01 04:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1288703· OSTI ID:20217428

Rodrigues, W ^[1]; Sakata, O ^[2]; Lee, T -L ^[2]; Walko, D A ^[2]; Marasco, D L ^[3]; Bedzyk, M J ^[2]

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1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
3. Department of Physics and Astronomy, Northwestern University Evanston, Illinois 60208 (United States)

The strain and morphology of Si/Ge films grown by surfactant mediated molecular beam epitaxy on Si(001) with Bi as the surfactant were studied with grazing-incidence x-ray diffraction, x-ray reflectivity, low-energy electron diffraction, and Auger electron spectroscopy. Bi is observed to prevent the intermixing of Ge and Si layers by inhibiting Ge segregation in Si. Without a surfactant the critical thickness of Ge/Si(001) is 3 monolayers (ML). Using Bi, two-dimensional growth of Ge is observed for films up to 10 ML in thickness, with the onset of strain relaxation occurring at 7 ML of Ge growth. At 10 ML, the top Ge atomic layers are only partially relaxed. This is achieved by introducing roughness at the interface of the Ge and Si layers. (c) 2000 American Institute of Physics.

• OSTI ID: 20217428
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 88; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
BISMUTH
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
GERMANIUM
SILICON
SURFACTANTS
THIN FILMS
X-RAY DIFFRACTION