Properties of melt-grown ZnSe solid-state radiation detectors
- II-VI Inc., Saxonburg, PA (United States)
- Brookhaven National Lab., Upton, NY (United States). Dept. of Physics
Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10 x 10 x 2 mm{sup 3}. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25 C. Pulse height spectra were obtained using {sup 241}Am and {sup 109}Cd at both 25 C and 150 C with applied bias of 9,000 V/cm. Current versus temperature was measured over the temperature range of 30 C to 150 C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of {minus}70 C to 170 C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product ({mu}{tau}) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10104816
- Report Number(s):
- BNL-61058; CONF-941061-10; ON: DE95003964; CRN: C/BNL--94-12; TRN: AHC29503%%110
- Resource Relation:
- Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Norfolk, VA (United States),30 Oct - 5 Nov 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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