Heavy Ion Backscattering Spectrometry for high sensitivity
Heavy Ion Backscattering Spectrometry (HIBS) using moderate energy (a few hundred keV) heavy ions has demonstrated sensitivity for medium-to-heavy surface impurities on Si more than 1000x greater than conventional Rutherford Backscattering Spectrometry (RBS). Problems with pileup are eliminated by a thin, self-supporting foil in front of the surface barrier detector (SBD), ranging out ions scattered from the substrate and allowing only ions scattered from impurities heavier than the substrate to reach the detector. Limitations to a SBD approach arise from relatively poor resolution at low energies, leading to the inability to resolve closely spaced impurity masses (such as Fe and Cu), as well as necessitating an analysis beam of 200 key or higher. In order to bypass these limitations and explore means of increasing sensitivity and mass resolution, we have built a Time-of-Flight (TOF) HIBS prototype, optimized for large solid angle.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10103081
- Report Number(s):
- SAND--92-1594C; CONF-921116--8; ON: DE93002489
- Country of Publication:
- United States
- Language:
- English
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Heavy Ion Backscattering Spectrometry (HIBS) for high sensitivity surface impurity detection
Time-of-flight heavy ion backscattering spectrometry