Heavy Ion Backscattering Spectrometry (HIBS) for high sensitivity surface impurity detection

Conference · Sat Dec 31 23:00:00 EST 1988

DOI:https://doi.org/10.1016/0168-583X(90)90804-4· OSTI ID:5820322

Knapp, J. A.; Doyle, B. L.

We describe a medium-energy, heavy ion beam (400 keV C/sup +/) technique for backscattering analyses of heavy trace elements on the surface of light substrates. Pulse pileup problems are eliminated by placing a thin (40 /mu/g/cm/sup 2/), self-supporting C foil in front of the surface barrier detector. In the present example the thickness is selected to range out the ions scattered from a Si substrate, while passing ions scattered from heavier impurities. Using this technique, called Heavy Ion Backscattering Spectrometry (HIBS), we show that sensitivities for impurity elements heavier than Ar on a Si substrate are as high as 10/sup 10/ atoms/cm/sup 2/ for Au to 5/times/10/sup 11/ atoms/cm/sup 2/ for Fe. 10 refs., 5 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5820322
• Report Number(s): SAND-89-0867C; CONF-8906161-5; ON: DE89014549
• Country of Publication: United States
• Language: English

Related Subjects

440300 -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BACKSCATTERING
BEAMS
DETECTION
ELASTIC SCATTERING
ELEMENTS
GOLD
IMPURITIES
ION BEAMS
METALS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
TRANSITION ELEMENTS