Quantitative Mapping of Switching Behavior in Piezoresponse Force Microscopy

Journal Article · Sat Dec 31 23:00:00 EST 2005 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.2214699· OSTI ID:1003336

Jesse, Stephen ^[1]; Lee, Ho Nyung ^[1]; Kalinin, Sergei V ^[1]

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1. ORNL

The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1003336
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 7 Vol. 77; ISSN 0034-6748
• Country of Publication: United States
• Language: English