The effects of interfacial layer thickness and processing on the radiation response of high-k/SiOxNy/Si(100) gate dielectric stacks.
Conference
·
OSTI ID:1002040
- Vanderbilt University, Nashville, TN
- IBM Thomas J. Watson Research Center, Yorktown Heights, NY
No abstract prepared.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1002040
- Report Number(s):
- SAND2003-2660C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation-induced charge trapping in thin Al[2]O[3]/SiO[x]N[y]/Si(100) gate dielectric stacks.
Development of a high-k gate stack for atomic-precision advanced manufacturing.
Deposition and dielectric response of CaCu3Ti4O12 thin and thick films for high energy density dielectric applications.
Conference
·
Thu May 01 00:00:00 EDT 2003
·
OSTI ID:923862
Development of a high-k gate stack for atomic-precision advanced manufacturing.
Conference
·
Fri Jan 31 23:00:00 EST 2020
·
OSTI ID:1768736
Deposition and dielectric response of CaCu3Ti4O12 thin and thick films for high energy density dielectric applications.
Conference
·
Sun Oct 01 00:00:00 EDT 2006
·
OSTI ID:1264128