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Office of Scientific and Technical Information
 

Radiation-induced charge trapping in thin Al[2]O[3]/SiO[x]N[y]/Si(100) gate dielectric stacks.

Conference ·
OSTI ID:923862
 [1];  [1];  [2];  [2]; ;  [2]; ; ;
  1. IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  2. Vanderbilt University, Nashville, TN
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
923862
Report Number(s):
SAND2003-1703C
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
RADIATION EFFECTS
TRAPPING