The growth of n-type GaSb by metal-organic chemical vapor deposition : effects of two-band conduction on carrier concentrations and donor activation.
n-type GaSb has been prepared by metal-organic chemical vapour deposition with tellurium donors using diethyltelluride as the dopant precursor. The maximum carrier concentration achieved was 1.7 x 10{sup 18} cm{sup -3}, as measured by van der Pauw-Hall effect measurements, for an atomic tellurium concentration of 1.8 x 10{sup 19} cm{sup -3}. The apparent low activation of tellurium donors is explained by a model that considers the effect of electrons occupying both the {Lambda} and L bands in GaSb due to the small energy difference between the {Lambda} and L conduction band minima. The model also accounts for the apparent increase in the carrier concentration determined by van der Pauw-Hall effect measurements at cryogenic temperatures.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1002039
- Report Number(s):
- SAND2003-2572J
- Journal Information:
- Proposed for publication in the Journal of Applied Physics., Journal Name: Proposed for publication in the Journal of Applied Physics. Journal Issue: 8 Vol. 19; ISSN 1361-6641; ISSN SSTEET; ISSN 0268-1242
- Country of Publication:
- United States
- Language:
- English
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