Reduction of Thermal Conductivity in Wafer-Bonded Silicon
Blocks of silicon up to 3-mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36 {micro}m, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded fair agreement for samples fabricated without the HF treatment.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC12-00SN39357
- OSTI ID:
- 896374
- Report Number(s):
- LM-06K135; TRN: US200703%%698
- Country of Publication:
- United States
- Language:
- English
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