Application of contact theory to metal-metal bonding of silicon wafers

Journal Article · Thu Nov 15 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2811724· OSTI ID:21064445

Leong, H L; Gan, C L; Thompson, C V; Pey, K L; Li, H Y ^[1]

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1. School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore) and Advanced Materials for Micro- and Nano-Systems, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576 (Singapore)

A model is presented which relates the applied load and surface roughness to the integrity of metal-metal wafer-level thermocompression bonds. Using contact theory, the true contact area is calculated as a function of the applied load and surface roughness as characterized using atomic force microscopy. The relationship between the nominal and true contact areas quantifies the effects of applied load and surface roughness on the bond integrity of the bonded wafers as indicated by the dicing yield. Experiments on Cu-Cu bonds show that the true contact area provides a better indicator of bond integrity than either the nominal contact area or applied force, taken together or separately.

• OSTI ID: 21064445
• Journal Information: Journal of Applied Physics, Vol. 102, Issue 10; Other Information: DOI: 10.1063/1.2811724; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
BONDING
COPPER
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES