Monolithic high voltage nonlinear transmission line fabrication process

Patent · Sat Jan 01 00:00:00 EST 1994

OSTI ID:869527

Cooper, Gregory A ^[1]

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1. 346 Primrose Dr., Pleasant Hill, CA 94523

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Cooper, Gregory A. (346 Primrose Dr., Pleasant Hill, CA 94523)
• Patent Number(s): US 5352627
• OSTI ID: 869527
• Country of Publication: United States
• Language: English

Related Subjects

monolithic
voltage
nonlinear
transmission
line
fabrication
process
fabricating
sequential
inductors
varactor
diodes
gaas
disclosed
epitaxially
grown
laminate
produced
applying
doped
active
n-type
layer
n-plus
type
substrate
heavily
p-type
applied
ohmic
contacts
desired
multiple
layers
etched
oxygen
implanted
isolate
individual
insulator
conductive
inductive
thereafter
top
complete
nonlinear transmission
doped p-type
doped n-type
multiple layer
p-type layer
insulator layer
heavily doped
transmission line
ohmic contact
fabrication process
gaas substrate
multiple layers
ohmic contacts
n-type layer
gaas layer
thereafter applied
epitaxially grown
varactor diode
/435/257/333/438/