Planar optical sources and detectors for monolithic integration with GaAs MESFET electronics

Conference · Fri Jan 01 00:00:00 EST 1982

OSTI ID:5186962

Kolbas, R; Carney, J; Abrokwah, J; Kalweit, E; Hitchell, M

The monolithic integration of GaAs electronics and light emitting sources (or detectors) is a desirable method for producing compact, reliable, potentially low-cost optoelectronic modules for fiber optic communications. The materials and processing required for optoelectronic components (emitters and detectors) and electronics (FETs) are different and often incompatible. This has been primarily responsible for the relatively slow development of integrated structures. Therefore, it is impotant that a method be developed for combining the two dissimilar technologies using materials and processes which do not place prohibitive restrictions on the performance or geometry of the optical and electronic devices. The progress and results are presented of an integration scheme termed emitter/detector-in-a-well which presents a simple solution to the problems that have plagued other integration schemes. MESFET compatible AlGaAs light emitting diodes and GaAs p-n junction detectors have been successfully fabricated on semi-insulating substrates using this new integrating scheme. Adjacent to each optoelectronic component there is an exposed surface of the semi-insulating substrate (for MESFET fabrication by direct ion implantation) which is coplanar to the top surface of the GaAs optoelectronic component. The merits of this all planar integration technique are discussed. In addition, the fabrication and performance of MESFET compatible Transverse Junction Stripe LEDs and Be-implanted detectors are presented.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Honeywell Corporate Physical Sciences Center, Bloomington, MN (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5186962
• Report Number(s): SAND-82-7005C; CONF-820107-7; ON: DE82010896
• Resource Relation: Conference: SPIE optical coatings for energy efficiency and solar applications conference, Los Angeles, CA, USA, 25 Jan 1982
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
FABRICATION
LIGHT EMITTING DIODES
PHOTODIODES
ALUMINIUM ARSENIDES
BERYLLIUM
CRYSTAL DOPING
EPITAXY
ETCHING
FIBER OPTICS
GALLIUM ARSENIDES
ION IMPLANTATION
P-N JUNCTIONS
PERFORMANCE
SUBSTRATES
ALKALINE EARTH METALS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM COMPOUNDS
JUNCTIONS
METALS
MICROELECTRONIC CIRCUITS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
420800* - Engineering- Electronic Circuits & Devices- (-1989)