(AlGa)As semiconductor lasers and integrated optoelectronics

Thesis/Dissertation · Thu Jan 01 00:00:00 EST 1981

OSTI ID:5431879

Wilt, D P

The design, fabrication, and testing of the first monolithic integrated optical repeater is described. An optical detector, electronic gain stage, and current modulated semiconductor laser transmitter integrated in a single crystal chip perform the function of regenerating an optical signal. The device has a measured optical gain (light out to light in) of 10 dB. The use of ion implantation as a technique to fabricate both lasers and field effect transistors is described. Devices fabricated included a beryllium implanted laser diode on N type GaAs substrate, a beryllium implanted laser diode on semi-insulating Cr doped GaAs substrate integrated with a field effect transistor driver, and sulfur implanted GaAs field effect transistors. A theoretical model of the double heterostructure laser is described which treats the p-n junction in the device correctly by using fundamental semiconductor relationships and reasonable assumptions about the device heterointerfaces. The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor laser is investigated. An approach to effective permittivity formalism is presented which clarifies and extends the use of this technique particularly in the treatment of waveguiding in the semiconductor laser. The scalar wave equation is posed in a variational form, and the effective permittivity formalism is treated as a variational approximation technique. The formalism is applied to the case of the buried heterostructure laser.

• OSTI ID: 5431879
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
MATHEMATICAL MODELS
OPERATION
ALUMINIUM ARSENIDES
CARRIER MOBILITY
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
ION IMPLANTATION
OPTICAL PUMPING
P-N JUNCTIONS
PERFORMANCE TESTING
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
MOBILITY
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TESTING
420300* - Engineering- Lasers- (-1989)