Proton irradiation effects on 2Gb flash memory
Conference
·
OSTI ID:828162
The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices after exposure to 200 MeV protons to various doses up to 83 krad(Si). They characterize observed failures and single event upsets on 22 devices from two different lots. Devices from both lots are robust to greater than 20 krad(Si) although they see evidence for lot-to-lot variation where only one lot appears robust up to about 50 krad(Si). Single event upsets are observed at a relatively low rate and are consistent with single isolated bit flips within registers that transfer bits to and from the flash memory cells.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 828162
- Report Number(s):
- FERMILAB-Conf-04-143-E; TRN: US0504234
- Resource Relation:
- Conference: IEEE NSREC Conference Record
- Country of Publication:
- United States
- Language:
- English
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