Prompt and total dose response of hard 4K and 16K CMOS static random access memories (SRAMs)

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333510· OSTI ID:5619847

Witteles, A A; Brucker, G L; Davidson, H; Jennings, R; Volmerange, H; Yue, H

The evolution of hardened CMOS memories has recently reached a milestone where the achieved bit density (16K bits/chip) is sufficiently large to warrant their application as an integral part of hardened systems, often replacing older memory technologies (e.g., magnetic core, plated wire, etc.) and achieving substantial performance (weight, power, volume) advantages. This paper discusses total dose and prompt dose rate effects in three types of SRAMs: Harris 6504RH (CMOS/ bulk) and, RCA 11121 (CMOS/SOS), which are commercially available 4K memories, and developmental samples of a more recent hardened 16K CMOS/SOS SRAM (RCA TA 12702). Major process improvements have resulted in enhancing the radiation hardness of CMOS/bulk and CMOS/ SOS integrated circuits. The total dose hardness had been increased to more than 100 Krads (Si) and the latchup sensitivity of CMOS/bulk has been eliminated for dose rates of 10/sup 12/ rads (Si)/s. The use of sapphire substrates in CMOS/SOS RAMs has resulted in increasing the upset threshold beyond 10/sup 11/ rads (Si)/s (45 ns pulse width.) In addition, the incorporation of cross coupled resistors in the inverters of CMOS/bulk memory cells has reduced the sensitivity to single event upset (SEU).

• Research Organization: TRW Inc., One Space Park, Redondo Beach, California 90278
• OSTI ID: 5619847
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR STORAGE DEVICES
RADIATION HARDENING
DOSE RATES
INTEGRATED CIRCUITS
INVERTERS
MOS TRANSISTORS
RESISTORS
SAPPHIRE
SENSITIVITY
SUBSTRATES
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
HARDENING
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems