Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application
- Univ. of Alabama, Huntsville, AL (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- Grant/Contract Number:
- NA0003525; AC07-051D14517; 1929099
- OSTI ID:
- 1830527
- Report Number(s):
- SAND-2021-14212J; 701484; TRN: US2216504
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 69, Issue 3; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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