Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

Kumari, Preeti; Surendranathan, Umeshwarnath; Wasiolek, Maryla; Hattar, Khalid; Bhat, Narayana; Ray, Biswajit

doi:10.1109/tns.2021.3125652

Title: Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

Journal Article · Sat Nov 13 00:00:00 EST 2021 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3125652· OSTI ID:1830527

Kumari, Preeti ^[1]; Surendranathan, Umeshwarnath ^[1]; Wasiolek, Maryla ^[2]; Hattar, Khalid ^[2]; Bhat, Narayana ^[1]; Ray, Biswajit ^[1]

Univ. of Alabama, Huntsville, AL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0003525; AC07-051D14517; 1929099

OSTI ID:: 1830527

Report Number(s):: SAND-2021-14212J; 701484; TRN: US2216504

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 69, Issue 3; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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