Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors

Conference · Mon May 22 00:00:00 EDT 2000

OSTI ID:756336

Bhattacharya, R N; Balcioglu, A; Ramanathan, K

The authors have fabricated high-efficiency thin-film CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 756336
• Report Number(s): NREL/CP-590-28415; TRN: AH200017%%56
• Resource Relation: Conference: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland (UK), 05/01/2000--05/05/2000; Other Information: PBD: 22 May 2000
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
INDIUM SELENIDE SOLAR CELLS
GALLIUM SELENIDES
FABRICATION
PRECURSOR
PHOTOVOLTAICS
CUIN(1-X)GA(X)SE
ELECTRODEPOSITION
DEVICES
SOLAR CELLS
PHYSICAL VAPOR DEPOSITION (PVD)
GRAZING INCIDENT X-RAY DIFFRACTION (GIXRD)
DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS)