14.1% CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}-based photovoltaic cells from electrodeposited precursors
- National Renewable Energy Lab., Golden, CO (United States); and others
The authors have fabricated 14.1% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu{sub 2}Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 659173
- Journal Information:
- Journal of the Electrochemical Society, Vol. 145, Issue 10; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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