Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States)
We have fabricated 15.4[percent] and 12.4[percent] efficient thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2]. The ED and EL device parameters are compared with those of a 17.7[percent] PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. [copyright] [ital 1999 American Institute of Physics.]
- OSTI ID:
- 6350148
- Journal Information:
- Applied Physics Letters, Vol. 75:10; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
COPPER COMPOUNDS
COPPER SELENIDE SOLAR CELLS
ELECTRODEPOSITION
GALLIUM COMPOUNDS
GALLIUM SELENIDES
INDIUM COMPOUNDS
INDIUM SELENIDE SOLAR CELLS
PHOTOVOLTAIC CELLS
PHYSICAL VAPOR DEPOSITION
PRECURSOR
SPECTRAL RESPONSE
THIN FILMS
CHALCOGENIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTROLYSIS
EQUIPMENT
FILMS
LYSIS
PHOTOELECTRIC CELLS
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion