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Title: Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.124716· OSTI ID:6350148
;  [1]; ;  [2]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
  2. Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States)

We have fabricated 15.4[percent] and 12.4[percent] efficient thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2]. The ED and EL device parameters are compared with those of a 17.7[percent] PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. [copyright] [ital 1999 American Institute of Physics.]

OSTI ID:
6350148
Journal Information:
Applied Physics Letters, Vol. 75:10; ISSN 0003-6951
Country of Publication:
United States
Language:
English