Technical report on task orders no. B239703 and B239705: Development of technology of Al-free high-power laser diodes
- Ioffe-Physico-Technical Inst., St. Petersburg (Russian Federation)
Our investigations of InGaAsP/GaAs system have shown that it is in many ways superior to the conventional AlGaAs/GaAs system. Lasers fabricated from InGaAsP/GaAs exhibit low facet overheating, high efficiency, good degradation characteristics, and high catastrophic optical damage (COD) limit. Our postgrowth technology provides stripe- contact lasers having very low series resistance and, therefore, high electrical-to-optical efficiency.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Ioffe-Physico-Technical Inst., St. Petersburg (Russian Federation)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 503345
- Report Number(s):
- UCRL-CR-125103; ON: DE97051603
- Resource Relation:
- Other Information: PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
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