5 W continuous wave power, 0.81-{mu}m-emitting, Al-free active-region diode lasers
- Reed Center for Photonics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- Laser Group, Coherent, Inc., Santa Clara, California 95056 (United States)
High power, 0.81-{mu}m-emitting, semiconductor diode lasers are used as pump sources for Nd:YAG solid-state lasers. Devices (1-mm-long) consisting of a InGaAsP/In{sub 0.5}(Ga{sub 0.9}Al{sub 0.1}){sub 0.5}P/In{sub 0.5}(Ga{sub 0.5}Al{sub 0.5}){sub 0.5}P laser structure provide a threshold-current density, J{sub th}, of 290A/cm{sup 2} and a relatively high threshold-current characteristic temperature, T{sub 0} (140 K). Uncoated diode lasers (1.2-mm-long) have a maximum continuous wave output power of 5 W (both facets) at 20{degree}C. The internal power density at catastrophic optical mirror damage (COMD), {bar P}{sub COMD}, is determined to be 9.1MW/cm{sup 2}; that is, 1.8 times that for GaAs-active layer, Al-free, uncoated devices. Coated, InGaAsP-active devices are expected to have {bar P}{sub COMD}=18MW/cm{sup 2}, more than twice the {bar P}{sub COMD} of AlGaAs-active, 0.81-{mu}m-emitting devices with the same emitting aperture. Therefore, 0.81-{mu}m-emitting, InGaAsP-active diode lasers should operate reliably at powers at least twice those of AlGaAs-based devices with the same contact-stripe geometry. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 531718
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 2; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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