InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency

Journal Article · Mon Jul 23 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103678· OSTI ID:6714811

Choi, H K; Wang, C A ^[1]

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1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108 (USA)

Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 {mu}m have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm{sup 2}, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length {ital L} of 1500 {mu}m. Differential quantum efficiencies as high as 90% have been obtained for {ital L}=300 {mu}m. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with {ital L}=1000 {mu}m.

• OSTI ID: 6714811
• Journal Information: Applied Physics Letters; (USA), Vol. 57:4; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
QUANTUM EFFICIENCY
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
DESIGN
GALLIUM ARSENIDES
INDIUM ARSENIDES
POWER LOSSES
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ENERGY LOSSES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
LOSSES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)