High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Journal Article · Mon May 14 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103028· OSTI ID:6813116

Arent, D J; Brovelli, L; Jaeckel, H; Marclay, E; Meier, H P ^[1]

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1. IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland (CH)

Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided {ital in} {ital situ} by lateral current blocking {ital pn} junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311){ital A} side facets to the preferential growth (100) active area facets. Uncoated devices (750 {mu}m{times}4 {mu}m) have been found to have threshold currents as low as 6 mA ({ital J}{sub th}=320 A/cm{sup 2}) and exhibit single-mode behavior to greater than 100 mW at a wavelength of {similar to}1.0 {mu}m when reflectivity modified (90%/10%).

• OSTI ID: 6813116
• Journal Information: Applied Physics Letters; (USA), Vol. 56:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
SEMICONDUCTOR LASERS
FABRICATION
THRESHOLD CURRENT
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
360602 - Other Materials- Structure & Phase Studies