Growth of strained InGaAs/GaAs quantum wells and index guided injection lasers over nonplanar substrates by molecular beam epitaxy

Journal Article · Thu Mar 01 00:00:00 EST 1990 · Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA)

DOI:https://doi.org/10.1116/1.584841· OSTI ID:7120610

Arent, D J; Galeuchet, Y D; Nilsson, S; Meier, H P ^[1]

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1. IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland (CH)

Strained InGaAs/GaAs quantum wells were grown on nonplanar substrates by molecular beam epitaxy and studied by scanning electron microscopy and low temperature spatially and spectrally resolved cathodoluminescence spectroscopy. For (100) ridges and grooves formed with (311){ital A} sidewalls, almost complete removal of In from the strained quantum wells on the (311){ital A} facet is observed. Corresponding increases of In content in the quantum wells grown on the (100) facets indicate that most if not all of the In is displaced from the (311){ital A} facet via interplanar adatom migration. Ga adatom migration is also observed under our growth conditions such that quantum wells grown nominally near the critical layer thickness on structures less than {approx equal}2.5 {mu}m wide are no longer pseudomorphically strained, as detected by luminescence linewidth analysis. We present the first results of strained InGaAs/GaAs index guided injection lasers grown by single-step molecular beam epitaxy over nonplanar substrates and show that differences greater than 50 meV in the effective band gap of a 70 A quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain. Room temperature threshold currents as low as 6 mA for 4 {mu}m{times}750 {mu}m uncoated devices lasing continuously at a wavelength of 1.01 {mu}m have been achieved.

• OSTI ID: 7120610
• Journal Information: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Vol. 8:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
ATOM TRANSPORT
MIGRATION LENGTH
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
LENGTH
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
360602 - Other Materials- Structure & Phase Studies