High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

Journal Article · Mon Oct 03 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99992· OSTI ID:6928803

Kim, J; Nouhi, A; Radhakrishnan, G; Liu, J K; Lang, R J; Katz, J

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrates grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30% without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/cm/sup 2/ when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

• Research Organization: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
• OSTI ID: 6928803
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:14
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
QUANTUM EFFICIENCY
THRESHOLD CURRENT
SILICON
SUBSTRATES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)
360601 - Other Materials- Preparation & Manufacture