Origin of deep localization in GaAs1-xBix and its consequences for alloy properties

Alberi, K.; Fluegel, B.; Beaton, D. A.; Steger, M.; Crooker, S. A.; Mascarenhas, A.

doi:10.1103/PhysRevMaterials.2.114603

Title: Origin of deep localization in $GaA s_{1 - x} B i_{x}$ and its consequences for alloy properties

Authors:

Alberi, K. ^[1]; Fluegel, B. ^[1]; Beaton, D. A. ^[1]; Steger, M. ^[1]; Crooker, S. A. ^[2]; Mascarenhas, A. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: Wed Nov 28 00:00:00 EST 2018

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1492517

Alternate Identifier(s):: OSTI ID: 1483728; OSTI ID: 1507332

Report Number(s):: NREL/JA-5K00-72762; LA-UR-18-27843
Journal ID: ISSN 2475-9953; PRMHAR

Grant/Contract Number:: AC36-08GO28308; AC3608GO28308; NSFDMR1157490; 89233218CNA000001

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 2; Journal Issue: 11; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; localization; semiconductor; High Magnetic Field Science

Citation Formats


                    Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., and Mascarenhas, A. Origin of deep localization in GaAs1-xBix and its consequences for alloy properties.  United States: N. p., 2018. 
Web.  doi:10.1103/PhysRevMaterials.2.114603.

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                    Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., & Mascarenhas, A. Origin of deep localization in GaAs1-xBix and its consequences for alloy properties.  United States.  https://doi.org/10.1103/PhysRevMaterials.2.114603

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                    Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., and Mascarenhas, A. Wed .  
"Origin of deep localization in GaAs1-xBix and its consequences for alloy properties".  United States.  https://doi.org/10.1103/PhysRevMaterials.2.114603.  https://www.osti.gov/servlets/purl/1492517.

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@article{osti_1492517,

  title        = {Origin of deep localization in GaAs1-xBix and its consequences for alloy properties},

  author       = {Alberi, K. and Fluegel, B. and Beaton, D. A. and Steger, M. and Crooker, S. A. and Mascarenhas, A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevMaterials.2.114603},

  journal      = {Physical Review Materials},

  number       = 11,

  volume       = 2,

  place        = {United States},

  year         = {Wed Nov 28 00:00:00 EST 2018},

  month        = {Wed Nov 28 00:00:00 EST 2018}

}

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Works referenced in this record:

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Works referencing / citing this record:

Deep levels analysis in wavelength extended InGaAsBi photodetector
journal, August 2019

Huang, Jian; Chen, Baile; Deng, Zhuo
Semiconductor Science and Technology, Vol. 34, Issue 9
DOI: 10.1088/1361-6641/ab3539

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Title: Origin of deep localization in GaA s 1 - x B i x and its consequences for alloy properties

Citation Formats

Compositional dependence of the exciton reduced mass in GaAs 1 − x Bi x ( x = 0 – 10 % ) journal, June 2010

Band Anticrossing in GaInNAs Alloys journal, February 1999

Thermally activated exciton transfer in GaAs 1 − x P x :N journal, September 1985

Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs 1 − x N x alloys: The appearance of a mobility edge journal, July 2012

Giant Spin-Orbit Bowing in GaAs 1 − x Bi x journal, August 2006

Bi isoelectronic impurities in GaAs journal, February 2008

Kinetically limited growth of GaAsBi by molecular-beam epitaxy journal, January 2012

Isoelectronic impurity states in GaAs:N journal, June 2000

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix journal, May 2008

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers journal, July 1992

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence journal, January 2013

Resonant Raman scattering on localized states due to disorder in GaAs 1 − x P x alloys journal, February 1988

Early manifestation of localization effects in diluted Ga(AsN) journal, June 2003

Distribution of bismuth atoms in epitaxial GaAsBi journal, March 2011

Experimental and theoretical studies of band gap alignment in GaAs 1−x Bi x /GaAs quantum wells journal, December 2014

Localization behavior at bound Bi complex states in GaA s 1 − x B i x journal, July 2017

Energy scale of compositional disorder in Ga(AsBi) journal, September 2015

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy journal, January 2000

Optical and spin properties of localized and free excitons in GaBi x As 1− x /GaAs multiple quantum wells journal, August 2016

Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition journal, March 2001

Spectrally resolved localized states in GaAs 1− x Bi x journal, February 2017

Extremely uniform bound exciton states in nitrogen δ -doped GaAs studied by photoluminescence spectroscopy in external magnetic fields journal, October 2011

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence journal, July 2009

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix journal, June 2008

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1 − x N x with x < 0.03 journal, April 1999

Diamagnetic shift of disorder-localized excitons in narrow GaAs ∕ AlGaAs quantum wells journal, September 2006

Band gap of GaAs1−xBix, 0<x<3.6% journal, June 2003

Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x journal, December 2015

Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study journal, June 2017

Similar and dissimilar aspects of III − V semiconductors containing Bi versus N journal, April 2005

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth journal, January 2012

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN journal, October 2016

Luminescence dynamics in Ga(AsBi) journal, April 2011

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs journal, December 2011

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs 1 − x N x journal, February 2001

Band engineering in dilute nitride and bismide semiconductor lasers journal, August 2012

Impact of alloy disorder on the band structure of compressively strained GaBi x As 1 − x journal, March 2013

Direct observation of the E − resonant state in GaA s 1 − x B i x journal, December 2015

Spatial correlation between Bi atoms in dilute GaAs 1 − x Bi x : From random distribution to Bi pairing and clustering journal, July 2008

The ground state of the exciton in a magnetic field journal, September 1971

Evolution of superclusters and delocalized states in GaAs 1 − x N x journal, November 2012

Deep levels analysis in wavelength extended InGaAsBi photodetector journal, August 2019

Title: Origin of deep localization in $GaA s_{1 - x} B i_{x}$ and its consequences for alloy properties

Compositional dependence of the exciton reduced mass in ${GaAs}_{1 - x} {Bi}_{x}$ $(x = 0 - 10 %)$
journal, June 2010

Band Anticrossing in GaInNAs Alloys
journal, February 1999

Thermally activated exciton transfer in ${GaAs}_{1 - x}$ $P_{x}$ :N
journal, September 1985

Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs $_{1 - x}$ N $_{x}$ alloys: The appearance of a mobility edge
journal, July 2012

Giant Spin-Orbit Bowing in ${GaAs}_{1 - x} {Bi}_{x}$
journal, August 2006

Bi isoelectronic impurities in GaAs
journal, February 2008

Kinetically limited growth of GaAsBi by molecular-beam epitaxy
journal, January 2012

Isoelectronic impurity states in GaAs:N
journal, June 2000

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
journal, May 2008

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
journal, July 1992

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence
journal, January 2013

Resonant Raman scattering on localized states due to disorder in ${GaAs}_{1 - x}$ $P_{x}$ alloys
journal, February 1988

Early manifestation of localization effects in diluted Ga(AsN)
journal, June 2003

Distribution of bismuth atoms in epitaxial GaAsBi
journal, March 2011

Experimental and theoretical studies of band gap alignment in GaAs _1−x Bi _x /GaAs quantum wells
journal, December 2014

Localization behavior at bound Bi complex states in $GaA s_{1 - x} B i_{x}$
journal, July 2017

Energy scale of compositional disorder in Ga(AsBi)
journal, September 2015

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy
journal, January 2000

Optical and spin properties of localized and free excitons in GaBi _x As _{1− x} /GaAs multiple quantum wells
journal, August 2016

Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition
journal, March 2001

Spectrally resolved localized states in GaAs ₁₋ _x Bi _x
journal, February 2017

Extremely uniform bound exciton states in nitrogen δ -doped GaAs studied by photoluminescence spectroscopy in external magnetic fields
journal, October 2011

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
journal, July 2009

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
journal, June 2008

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in ${GaAs}_{1 - x} N_{x}$ with $x < 0.03$
journal, April 1999

Diamagnetic shift of disorder-localized excitons in narrow $GaAs ∕ AlGaAs$ quantum wells
journal, September 2006

Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003

Insight into the epitaxial growth of high optical quality GaAs _1–x Bi _x
journal, December 2015

Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study
journal, June 2017

Similar and dissimilar aspects of $III − V$ semiconductors containing $Bi$ versus $N$
journal, April 2005

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
journal, January 2012

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
journal, October 2016

Luminescence dynamics in Ga(AsBi)
journal, April 2011

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
journal, December 2011

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped ${GaAs}_{1 - x} N_{x}$
journal, February 2001

Band engineering in dilute nitride and bismide semiconductor lasers
journal, August 2012

Impact of alloy disorder on the band structure of compressively strained GaBi $_{x}$ As $_{1 - x}$
journal, March 2013

Direct observation of the $E_{-}$ resonant state in $GaA s_{1 − x} B i_{x}$
journal, December 2015

Spatial correlation between Bi atoms in dilute ${GaAs}_{1 - x} {Bi}_{x}$ : From random distribution to Bi pairing and clustering
journal, July 2008

The ground state of the exciton in a magnetic field
journal, September 1971

Evolution of superclusters and delocalized states in GaAs $_{1 - x}$ N $_{x}$
journal, November 2012

Deep levels analysis in wavelength extended InGaAsBi photodetector
journal, August 2019