Localization behavior at bound Bi complex states in
Abstract
While bismuth-related states are known to localize carriers in GaAs1-xBix alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs1-xBix alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1415386
- Alternate Identifier(s):
- OSTI ID: 1372728; OSTI ID: 1415125
- Report Number(s):
- LA-UR-17-24317; NREL/JA-5K00-68789
Journal ID: ISSN 2475-9953; TRN: US1800787
- Grant/Contract Number:
- AC52-06NA25396; AC36-08GO28308; NSF-DMR-1157490
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; High Magnetic Field Science; isoelectronic impurity; localization
Citation Formats
Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A. Localization behavior at bound Bi complex states in GaAs1-xBix. United States: N. p., 2017.
Web. doi:10.1103/PhysRevMaterials.1.024605.
Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., & Mascarenhas, A. Localization behavior at bound Bi complex states in GaAs1-xBix. United States. https://doi.org/10.1103/PhysRevMaterials.1.024605
Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A. Tue .
"Localization behavior at bound Bi complex states in GaAs1-xBix". United States. https://doi.org/10.1103/PhysRevMaterials.1.024605. https://www.osti.gov/servlets/purl/1415386.
@article{osti_1415386,
title = {Localization behavior at bound Bi complex states in GaAs1-xBix},
author = {Alberi, K. and Christian, T. M. and Fluegel, B. and Crooker, S. A. and Beaton, D. A. and Mascarenhas, A.},
abstractNote = {While bismuth-related states are known to localize carriers in GaAs1-xBix alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs1-xBix alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.},
doi = {10.1103/PhysRevMaterials.1.024605},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {Tue Jul 25 00:00:00 EDT 2017},
month = {Tue Jul 25 00:00:00 EDT 2017}
}
Web of Science
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