Localization behavior at bound Bi complex states in GaAs1-xBix

Alberi, K.; Christian, T. M.; Fluegel, B.; Crooker, S. A.; Beaton, D. A.; Mascarenhas, A.

doi:10.1103/PhysRevMaterials.1.024605

Title: Localization behavior at bound Bi complex states in $GaA s_{1 - x} B i_{x}$

Abstract

While bismuth-related states are known to localize carriers in GaAs_1-xBi_x alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs_1-xBi_x alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.

Authors:

Alberi, K. ^[1]; Christian, T. M. ^[1]; Fluegel, B. ^[1]; Crooker, S. A. ^[2]; Beaton, D. A. ^[1]; Mascarenhas, A. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: Tue Jul 25 00:00:00 EDT 2017

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1415386

Alternate Identifier(s):: OSTI ID: 1372728; OSTI ID: 1415125

Report Number(s):: LA-UR-17-24317; NREL/JA-5K00-68789
Journal ID: ISSN 2475-9953; TRN: US1800787

Grant/Contract Number:: AC52-06NA25396; AC36-08GO28308; NSF-DMR-1157490

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; High Magnetic Field Science; isoelectronic impurity; localization

Citation Formats


                    Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A. Localization behavior at bound Bi complex states in GaAs1-xBix.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevMaterials.1.024605.

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                    Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., & Mascarenhas, A. Localization behavior at bound Bi complex states in GaAs1-xBix.  United States.  https://doi.org/10.1103/PhysRevMaterials.1.024605

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                    Alberi, K., Christian, T. M., Fluegel, B., Crooker, S. A., Beaton, D. A., and Mascarenhas, A. Tue .  
"Localization behavior at bound Bi complex states in GaAs1-xBix".  United States.  https://doi.org/10.1103/PhysRevMaterials.1.024605.  https://www.osti.gov/servlets/purl/1415386.

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@article{osti_1415386,

  title        = {Localization behavior at bound Bi complex states in GaAs1-xBix},

  author       = {Alberi, K. and Christian, T. M. and Fluegel, B. and Crooker, S. A. and Beaton, D. A. and Mascarenhas, A.},

  abstractNote = {While bismuth-related states are known to localize carriers in GaAs1-xBix alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs1-xBix alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.},

  doi          = {10.1103/PhysRevMaterials.1.024605},

  journal      = {Physical Review Materials},

  number       = 2,

  volume       = 1,

  place        = {United States},

  year         = {Tue Jul 25 00:00:00 EDT 2017},

  month        = {Tue Jul 25 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Bandgap of cubic ZnS _1-x O _x from optical transmission spectroscopy
journal, February 2019

Huso, Jesse; Bergman, Leah; McCluskey, Matthew D.
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Title: Localization behavior at bound Bi complex states in GaA s 1 - x B i x

Abstract

Citation Formats

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Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 − x Bi x alloys journal, May 2016

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Title: Localization behavior at bound Bi complex states in $GaA s_{1 - x} B i_{x}$

Compositional dependence of the exciton reduced mass in ${GaAs}_{1 - x} {Bi}_{x}$ $(x = 0 - 10 %)$
journal, June 2010

Configuration dependence of band-gap narrowing and localization in dilute ${GaAs}_{1 - x} {Bi}_{x}$ alloys
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Tuning of the electron effective mass and exciton wavefunction size in GaAs1−xNx
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Anomaly of the linear and quadratic Zeeman effect of an effective-mass acceptor: C in GaAs
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Insight into the epitaxial growth of high optical quality GaAs _1–x Bi _x
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