Analytic band-to-trap tunneling model including band offset for heterojunction devices
Abstract
In this paper, we present an analytic band-to-trap tunneling model based on the open boundary scattering approach. The new model has three major advantages: (i) It includes not only the well-known electric field effect, but more importantly, the effect of heterojunction band offset. This feature allows us to simulate both electric field and band offset enhanced carrier recombination near a heterojunction in heterostructures. (ii) Its analytic form enables straightforward implementation into a parallel Technology Computer Aided Design device and circuit simulators. (iii) The developed method can be used for any potentials which can be approximated to a good degree such that the Schrödinger equation with open boundary conditions results in piecewise analytic wave functions. Simulation results of an InGaP/GaAs heterojunction bipolar transistor (HBT) reveal that the proposed model predicts significantly increased base currents, because the tunneling of holes in the base to traps in the emitter is greatly enhanced by the emitter-base band offset. Lastly, this finding, which is not captured by existing band-to-trap tunneling models, is consistent with the experimental observation for an InGaP/GaAs HBT after neutron irradiation.
- Authors:
-
[1];
[1]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- New Mexico Institute of Mining and Technology, Socorro, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1498487
- Report Number(s):
- SAND-2018-11780J
Journal ID: ISSN 0021-8979; 669296
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: 5; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Gao, Xujiao, Kerr, Bert, and Huang, Andy. Analytic band-to-trap tunneling model including band offset for heterojunction devices. United States: N. p., 2019.
Web. doi:10.1063/1.5078685.
Gao, Xujiao, Kerr, Bert, & Huang, Andy. Analytic band-to-trap tunneling model including band offset for heterojunction devices. United States. https://doi.org/10.1063/1.5078685
Gao, Xujiao, Kerr, Bert, and Huang, Andy. Tue .
"Analytic band-to-trap tunneling model including band offset for heterojunction devices". United States. https://doi.org/10.1063/1.5078685. https://www.osti.gov/servlets/purl/1498487.
@article{osti_1498487,
title = {Analytic band-to-trap tunneling model including band offset for heterojunction devices},
author = {Gao, Xujiao and Kerr, Bert and Huang, Andy},
abstractNote = {In this paper, we present an analytic band-to-trap tunneling model based on the open boundary scattering approach. The new model has three major advantages: (i) It includes not only the well-known electric field effect, but more importantly, the effect of heterojunction band offset. This feature allows us to simulate both electric field and band offset enhanced carrier recombination near a heterojunction in heterostructures. (ii) Its analytic form enables straightforward implementation into a parallel Technology Computer Aided Design device and circuit simulators. (iii) The developed method can be used for any potentials which can be approximated to a good degree such that the Schrödinger equation with open boundary conditions results in piecewise analytic wave functions. Simulation results of an InGaP/GaAs heterojunction bipolar transistor (HBT) reveal that the proposed model predicts significantly increased base currents, because the tunneling of holes in the base to traps in the emitter is greatly enhanced by the emitter-base band offset. Lastly, this finding, which is not captured by existing band-to-trap tunneling models, is consistent with the experimental observation for an InGaP/GaAs HBT after neutron irradiation.},
doi = {10.1063/1.5078685},
journal = {Journal of Applied Physics},
number = 5,
volume = 125,
place = {United States},
year = {Tue Feb 05 00:00:00 EST 2019},
month = {Tue Feb 05 00:00:00 EST 2019}
}
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