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Title: Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.
Authors:
 [1] ; ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1301989
Report Number(s):
SAND--2016-4695J
Journal ID: ISSN 0021-8979; 640353
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security (NA-70)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY tunneling; heterojunctions; conduction electrons; band models; valence bands