Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset
Abstract
In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.
- Authors:
-
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- New Mexico Institute of Mining and Technology, Socorro, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1429661
- Report Number(s):
- SAND-2017-11476J
Journal ID: ISSN 1938-6737; 658063
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ECS Transactions (Online)
- Additional Journal Information:
- Journal Name: ECS Transactions (Online); Journal Volume: 80; Journal Issue: 10; Journal ID: ISSN 1938-6737
- Publisher:
- Electrochemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Gao, Xujiao, Huang, Andy, and Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset. United States: N. p., 2017.
Web. doi:10.1149/08010.1005ecst.
Gao, Xujiao, Huang, Andy, & Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset. United States. https://doi.org/10.1149/08010.1005ecst
Gao, Xujiao, Huang, Andy, and Kerr, Bert. Wed .
"Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset". United States. https://doi.org/10.1149/08010.1005ecst. https://www.osti.gov/servlets/purl/1429661.
@article{osti_1429661,
title = {Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset},
author = {Gao, Xujiao and Huang, Andy and Kerr, Bert},
abstractNote = {In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.},
doi = {10.1149/08010.1005ecst},
journal = {ECS Transactions (Online)},
number = 10,
volume = 80,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}
Works referencing / citing this record:
Analytic band-to-trap tunneling model including band offset for heterojunction devices
journal, February 2019
- Gao, Xujiao; Kerr, Bert; Huang, Andy
- Journal of Applied Physics, Vol. 125, Issue 5