High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609070227· OSTI ID:21260319

Chiu, S -Y; Lour, W -S ^[1]; Guo, D -F ^[2]

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1. National Taiwan Ocean University, Department of Electrical Engineering (China)
2. Air Force Academy, Department of Electronic Engineering (China)

In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

• OSTI ID: 21260319
• Journal Information: Semiconductors, Vol. 43, Issue 7; Other Information: DOI: 10.1134/S1063782609070227; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMPLIFIERS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INTEGRATED CIRCUITS
LAYERS
PERFORMANCE
TRANSISTORS