Origin of deep localization in and its consequences for alloy properties
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1492517
- Alternate Identifier(s):
- OSTI ID: 1483728; OSTI ID: 1507332
- Report Number(s):
- NREL/JA-5K00-72762; LA-UR-18-27843
Journal ID: ISSN 2475-9953; PRMHAR
- Grant/Contract Number:
- AC36-08GO28308; AC3608GO28308; NSFDMR1157490; 89233218CNA000001
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 11; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; localization; semiconductor; High Magnetic Field Science
Citation Formats
Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., and Mascarenhas, A. Origin of deep localization in GaAs1-xBix and its consequences for alloy properties. United States: N. p., 2018.
Web. doi:10.1103/PhysRevMaterials.2.114603.
Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., & Mascarenhas, A. Origin of deep localization in GaAs1-xBix and its consequences for alloy properties. United States. https://doi.org/10.1103/PhysRevMaterials.2.114603
Alberi, K., Fluegel, B., Beaton, D. A., Steger, M., Crooker, S. A., and Mascarenhas, A. Wed .
"Origin of deep localization in GaAs1-xBix and its consequences for alloy properties". United States. https://doi.org/10.1103/PhysRevMaterials.2.114603. https://www.osti.gov/servlets/purl/1492517.
@article{osti_1492517,
title = {Origin of deep localization in GaAs1-xBix and its consequences for alloy properties},
author = {Alberi, K. and Fluegel, B. and Beaton, D. A. and Steger, M. and Crooker, S. A. and Mascarenhas, A.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.2.114603},
journal = {Physical Review Materials},
number = 11,
volume = 2,
place = {United States},
year = {Wed Nov 28 00:00:00 EST 2018},
month = {Wed Nov 28 00:00:00 EST 2018}
}
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Works referencing / citing this record:
Deep levels analysis in wavelength extended InGaAsBi photodetector
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