Title: Ultratough single crystal boron-doped diamond

Abstract

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

Inventors:

Hemley, Russell J ^[1]; Mao, Ho-Kwang ^[1]; Yan, Chih-Shiue ^[1]; Liang, Qi ^[1]

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1. Carnegie Inst. for Science, Washington, DC (United States)

Issue Date:

Tue May 05 00:00:00 EDT 2015

Research Org.:

Carnegie Inst. of Washington, Washington, DC (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1179032

Patent Number(s):

9023306

Application Number:

12/435,565

Assignee:

Carnegie Institution of Washington (Washington, DC)

Patent Classifications (CPCs):

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/274 - {using microwave discharges}
C23C16/278 - {doping or introduction of a secondary phase in the diamond}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/00 - Single-crystal growth by condensing evaporated or sublimed materials
C30B25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B25/105 - {by irradiation or electric discharge}
C30B25/16 - Controlling or regulating
C30B25/165 - {the flow of the reactive gases}
C30B29/04 - Diamond

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Resource Type:

Patent

Resource Relation:

Patent File Date: 2009 May 05

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE