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Title: Piezoresistive boron doped diamond nanowire

Patent ·
OSTI ID:1324680

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL)
Patent Number(s):
9,441,940
Application Number:
14/601,908
OSTI ID:
1324680
Resource Relation:
Patent File Date: 2015 Jan 21
Country of Publication:
United States
Language:
English

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  • Pérez Quintero, Kenneth J.; Antipov, Sergey; Sumant, Anirudha V.
  • Applied Physics Letters, Vol. 105, Issue 12, Article No. 123103 https://doi.org/10.1063/1.4896418
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