Title: Piezoresistive boron doped diamond nanowire

Abstract

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Inventors:

Sumant, Anirudha V.; Wang, Xinpeng

Issue Date:

Tue Sep 13 00:00:00 EDT 2016

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1324680

Patent Number(s):

9441940

Application Number:

14/601,908

Assignee:

UCHICAGO ARGONNE, LLC (Chicago, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G01 - MEASURING G01B - MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

G - PHYSICS G01 - MEASURING G01B - MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS

G01B7/14 - for measuring distance or clearance between spaced objects or spaced apertures
G01B7/18 - {using change in resistance}

G - PHYSICS G01 - MEASURING G01L - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE

G01L1/18 - using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
G01L1/2293 - {of the semi-conductor type

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/042 - {Changing their shape, e.g. forming recesses
H01L21/043 - {Ohmic electrodes}
H01L21/308 - using masks
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/0669 - {Nanowires or nanotubes
H01L29/0673 - {oriented parallel to a substrate}
H01L29/1602 - {Diamond}
H01L29/167 - further characterised by the doping material {

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Jan 21

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY