Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Koeck, Franz A.; Chowdhury, Srabanti; Nemanich, Robert J.

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Patent · Tue Nov 06 00:00:00 EST 2018

OSTI ID:1492817

Koeck, Franz A.; Chowdhury, Srabanti; Nemanich, Robert J.

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

View Patent

Cite

Export

Save

Research Organization:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AR0000453

Assignee:: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ)

Patent Number(s):: 10,121,657

Application Number:: 15/151,295

OSTI ID:: 1492817

Resource Relation:: Patent File Date: 2016 May 10

Country of Publication:: United States

Language:: English

References (58)

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications Luong, John H. T.; Male, Keith B.; Glennon, Jeremy D. The Analyst, Vol. 134, Issue 10, p. 1965-1979 https://doi.org/10.1039/b910206j	journal	January 2009
Flat panel display based on diamond thin films Kumar, Nalin; Xie, Chenggang https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5551903 US Patent Document 5,551,903	patent	September 1996
Thermionic electron emission from low work-function phosphorus doped diamond films Koeck, Franz A. M.; Nemanich, Robert J.; Lazea, Andrada Diamond and Related Materials, Vol. 18, Issue 5-8 https://doi.org/10.1016/j.diamond.2009.01.024	journal	May 2009
Electron Emitting Device with Projection Comprising Base Portion and Electron Emission Portion Tatsumi, Natsuo; Namba, Akihiko; Nishibayashi, Yoshiki https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080042144 US Patent Application 11/889389; 20080042144	patent-application	February 2008
Electron Emission Element, Method of Manufacturing the Same, Display Device and Method of Manufacturing the Same Yamamoto, Masahiko; Mori, Miki; Fukuda, Yumi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030001490 US Patent Application 10/234151; 20030001490	patent-application	January 2003
Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition Maida, Osamu; Tada, Shuhei; Nishio, Haruki Journal of Crystal Growth, Vol. 424, p. 33-37 https://doi.org/10.1016/j.jcrysgro.2015.04.037	journal	August 2015
Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces Baumann, P. K.; Nemanich, R. J. Surface Science, Vol. 409, Issue 2, p. 320-335 https://doi.org/10.1016/S0039-6028(98)00259-3	journal	July 1998
Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth Pinault-Thaury, M.-A.; Tillocher, T.; Kobor, D. Journal of Crystal Growth, Vol. 335, Issue 1, p. 31-36 https://doi.org/10.1016/j.jcrysgro.2011.06.007	journal	November 2011
Method and Apparatus of Growing Metal-Free and Low Stress Thick Film of Diamond-Like Carbon Wang, Zhonghui Alex https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150104648 US Patent Application 14/490692; 20150104648	patent-application	April 2015
Thermionic cathode of high emissive power for an electric tube, and process for its manufacture Buxbaum, Charley https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4752713 US Patent Document 4,752,713	patent	June 1988
Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same Yamada, Takatoshi; Shikata, Shinichi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8075359 US Patent Document 8,075,359	patent	December 2011
Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same Kato, Hiromitsu; Yamasaki, Satoshi; Ookushi, Hideyo https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8876973 US Patent Document 8,876,973	patent	November 2014
Method for making inversion mode diamond electron source Kane, Robert C.; Zhu, Xiaodong T. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5631196 US Patent Document 5,631,196	patent	May 1997
Enhanced thermionic energy conversion and thermionic emission from doped diamond films through methane exposure Koeck, Franz A. M.; Nemanich, Robert J.; Balasubramaniam, Yasodhaadevi Diamond and Related Materials, Vol. 20, Issue 8, p. 1229-1233 https://doi.org/10.1016/j.diamond.2011.06.032	journal	August 2011
Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films Janssen, Wiebke; Turner, Stuart; Sakr, Georges physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 8, p. 705-709 https://doi.org/10.1002/pssr.201409235	journal	June 2014
Method of forming a boron-doped diamond film by chemical vapor deposition Chen, Chih-Kun; Chen, Sheng-Hsiung; Hong, Tsao-Ming https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5635258 US Patent Document 5,635,258	patent	June 1997
Semiconductor device and method for manufacturing the same Suzuki, Mariko; Sakai, Tadashi; Sakuma, Naoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8878190 US Patent Document 8,878,190	patent	November 2014
n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi Journal of Physics D: Applied Physics, Vol. 40, Issue 20, p. 6189-6200 https://doi.org/10.1088/0022-3727/40/20/S05	journal	October 2007
Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D. Applied Physics Letters, Vol. 105, Issue 23, Article No. 232106 https://doi.org/10.1063/1.4903779	journal	December 2014
Method for manufacture of field emission array Mearini, Gerald T.; Kusner, Robert E. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5944573 US Patent Document 5,944,573	patent	August 1999
CVD diamond—Research, applications, and challenges Nemanich, Robert J.; Carlisle, John A.; Hirata, Atsushi MRS Bulletin, Vol. 39, Issue 6, p. 490-494 https://doi.org/10.1557/mrs.2014.97	journal	June 2014
Plasma Doping to Reduce Dielectric Loss During Removal of Dummy Layers in a Gate Structure Huang, Yu-Lien; Lin, Chia-Pin; Wang, Sheng-Hsiung https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120248550 US Patent Application 13/077358; 20120248550	patent-application	October 2012
Methods of Forming Integrated Circuits Wong, King-Yuen; Cheng, Ming-Lung; Chan, Chien-Tai https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120135575 US Patent Application 13/042539; 20120135575	patent-application	May 2012
Phosphorus-doped chemical vapor deposition of diamond Koizumi, Satoshi; Teraji, Tokuyuki; Kanda, Hisao Diamond and Related Materials, Vol. 9, Issue 3-6 https://doi.org/10.1016/S0925-9635(00)00217-X	journal	April 2000
Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate Sun, Tian Yin; Koeck, Franz A. M.; Nemanich, Robert J. Advances in Science and Technology, Vol. 95 https://doi.org/10.4028/www.scientific.net/AST.95.1	journal	October 2014
Wear resistant vapor deposited coating, method of coating deposition and applications therefor Gorokhovsky, Vladimir; Heckerman, Brad B. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070284255 US Patent Application 11/804433; 20070284255	patent-application	December 2007
Phosphorus incorporation in plasma deposited diamond films Schauer, S. N.; Flemish, J. R.; Wittstruck, R. Applied Physics Letters, Vol. 64, Issue 9, p. 1094-1096 https://doi.org/10.1063/1.110943	journal	February 1994
Semiconductor Device Suzuki, Mariko; Sakai, Tadashi; Sakuma, Naoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150349060 US Patent Application 14/825235; 20150349060	patent-application	December 2015
Synthesis of phosphorus-doped diamond Kamo, Mutsukazu; Koizumi, Satoshi; Ozaki, Hiroyuki https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5961717 US Patent Document 5,961,717	patent	October 1999
Low work function diamond surface and radiation energy converters using same Fox, Neil; Martin, Tomas Liam; O'Donnell, Kane Michael https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8617651 US Patent Document 8,617,651	patent	December 2013
Low friction and protective diamond-like carbon coatings deposited by asymmetric bipolar pulsed plasma Corbella, C.; Rubio-Roy, M.; Bertran, E. Diamond and Related Materials, Vol. 18, Issue 5-8, p. 1035-1038 https://doi.org/10.1016/j.diamond.2009.01.003	journal	May 2009
n-Type CVD diamond: Epitaxy and doping Pinault-Thaury, M.-A.; Tillocher, T.; Habka, N. Materials Science and Engineering: B, Vol. 176, Issue 17, p. 1401-1408 https://doi.org/10.1016/j.mseb.2011.02.015	journal	October 2011
Hybrid thermionic energy converter and method Kucherov, Yan R.; Hagelstein, Peter L. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6489704 US Patent Document 6,489,704	patent	December 2002
Photon-enhanced thermionic emission from heterostructures with low interface recombination Schwede, J. W.; Sarmiento, T.; Narasimhan, V. K. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2577	journal	March 2013
Collector for thermionic energy converter covered with carbon like material and having a low electronic work function Holmlid, Leif; Svensson, Robert https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5578886 US Patent Document 5,578,886	patent	November 1996
Boron-Doped Nanocrystalline Diamond Swain, Greg M.; Show, Yoshiyuki; Sonthalia, Prerna https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050110024 US Patent Application 10/991272; 20050110024	patent-application	May 2005
Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations Nemanich, Robert J.; Koeck, Franz A. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8188456 US Patent Document 8,188,456	patent	May 2012
System and method for producing synthetic diamond Linares, Robert C.; Doering, Patrick J. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6582513 US Patent Document 6,582,513	patent	June 2003
Method of Processing a Substrate Support Assembly Boyd, Jr., Wendell Glen; Parkhe, Vijay D.; Thach, Sehn https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150059974 US Patent Application 14/059251; 20150059974	patent-application	March 2015
High-speed diamond growth using a microwave plasma in pulsed mode Gicquel, Alix; Silva, François; Duten, Xavier https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7662441 US Patent Document 7,662,441	patent	February 2010
Low energy ion doping of growing diamond by CVD Schmidt, Howard K. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5234724 US Patent Document 5,234,724	patent	August 1993
High performance isothermal photo-thermionic solar converters Segev, Gideon; Kribus, Abraham; Rosenwaks, Yossi Solar Energy Materials and Solar Cells, Vol. 113, p. 114-123 https://doi.org/10.1016/j.solmat.2013.02.002	journal	June 2013
Impurity-to-band activation energy in phosphorus doped diamond Stenger, I.; Pinault-Thaury, M.-A.; Kociniewski, T. Journal of Applied Physics, Vol. 114, Issue 7, Article No. 073711 https://doi.org/10.1063/1.4818946	journal	August 2013
Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application Kato, Hiromitsu; Takeuchi, Daisuke; Ogura, Masahiko Diamond and Related Materials, Vol. 63, p. 165-168 https://doi.org/10.1016/j.diamond.2015.08.002	journal	March 2016
Photon-enhanced thermionic emission for solar concentrator systems Schwede, Jared W.; Bargatin, Igor; Riley, Daniel C. Nature Materials, Vol. 9, Issue 9 https://doi.org/10.1038/nmat2814	journal	August 2010
Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films Sun, Tianyin; Koeck, Franz A. M.; Zhu, Chiyu Applied Physics Letters, Vol. 99, Issue 20, Article No. 202101 https://doi.org/10.1063/1.3658638	journal	November 2011
Low work function materials for microminiature energy conversion and recovery applications Zavadil, Kevin R.; Ruffner, Judith A.; King, Donald B. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6563256 US Patent Document 6,563,256	patent	May 2003
Characterization of specific contact resistance on heavily phosphorus-doped diamond films Kato, Hiromitsu; Takeuchi, Daisuke; Tokuda, Norio Diamond and Related Materials, Vol. 18, Issue 5-8, p. 782-785 https://doi.org/10.1016/j.diamond.2009.01.033	journal	May 2009
Doped diamond thin film electron sources for thermionic energy conversion Koeck, Franz A. M.; Nemanich, Robert J.; Sharp, Jeff 2013 26th International Vacuum Nanoelectronics Conference (IVNC) https://doi.org/10.1109/IVNC.2013.6624727	conference	July 2013
Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films Koeck, Franz A. M.; Nemanich, Robert J. Diamond and Related Materials, Vol. 18, Issue 2-3, p. 232-234 https://doi.org/10.1016/j.diamond.2008.11.023	journal	February 2009
High uniformity boron doped diamond material Scarsbrook, Geoffrey Alan https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8277622 US Patent Document 8,277,622	patent	October 2012
Solar Energy Conversion Apparatus, and Methods of Making and Using the Same Nemanich, Robert J.; Koeck, Franz A. M.; Sun, Tianyin https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160043260 US Patent Application 14/823132; 20160043260	patent-application	February 2016
Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi Thin Solid Films, Vol. 539, p. 134-138 https://doi.org/10.1016/j.tsf.2013.05.089	journal	July 2013
Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films Koeck, Franz A. M.; Nemanich, Robert J. Journal of Applied Physics, Vol. 112, Issue 11, Article No. 113707 https://doi.org/10.1063/1.4766442	journal	December 2012
Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates Sun, Tianyin; Koeck, Franz A. M.; Rezikyan, Aram Physical Review B, Vol. 90, Issue 12 https://doi.org/10.1103/PhysRevB.90.121302	journal	September 2014
Process and apparatus for diamond synthesis Asmussen, Jes; Grotjohn, Timothy; Reinhard, Donnie https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090239078 US Patent Application 12/381270; 20090239078	patent-application	September 2009
P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm Dutta, M.; Koeck, F. A. M.; Nemanich, R. J. 2015 73rd Annual Device Research Conference (DRC) https://doi.org/10.1109/DRC.2015.7175618	conference	June 2015
Multi-Crystal Diamond Body Konovalov, Valeriy V.; Lucek, John https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150329989 US Patent Application 14/652937; 20150329989	patent-application	November 2015

Similar Records

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1492817

Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; +2 more

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Journal Article · Mon Aug 08 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1492817

Balasubramaniam, Y.; Janssens, S. D.; Nesládek, M.; +8 more

Diamond/diamond-like thin film growth in a methane plasma on unetched, unheated, N-type Si(100) substrates

Conference · Thu Jun 01 00:00:00 EDT 1995 · OSTI ID:1492817

Williams, E; Richardson, J Jr; Anderson, D; +1 more

Related Subjects

36 MATERIALS SCIENCE

Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Citation Formats

References (58)

Similar Records

Related Subjects