ScAIN etch mask for highly selective etching
Abstract
A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 μm compared to a surface roughness of 2.8 μm for an AlN etch mask.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1650902
- Patent Number(s):
- 10651048
- Application Number:
- 16/537,953
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 08/12/2019
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Henry, Michael David, Young, Travis Ryan, and Douglas, Erica Ann. ScAIN etch mask for highly selective etching. United States: N. p., 2020.
Web.
Henry, Michael David, Young, Travis Ryan, & Douglas, Erica Ann. ScAIN etch mask for highly selective etching. United States.
Henry, Michael David, Young, Travis Ryan, and Douglas, Erica Ann. Tue .
"ScAIN etch mask for highly selective etching". United States. https://www.osti.gov/servlets/purl/1650902.
@article{osti_1650902,
title = {ScAIN etch mask for highly selective etching},
author = {Henry, Michael David and Young, Travis Ryan and Douglas, Erica Ann},
abstractNote = {A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etch mask yielded a surface roughness of 0.6 μm compared to a surface roughness of 2.8 μm for an AlN etch mask.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 12 00:00:00 EDT 2020},
month = {Tue May 12 00:00:00 EDT 2020}
}
Works referenced in this record:
Scandium-Containing III-N Etch-Stop Layers for Selective Etching of III-Nitrides and Related Materials
patent-application, May 2018
- Hardy, Matthew T.; Downey, Brian P.; Meyer, David J.
- US Patent Application 15/807821; 20180130883