Conductivity based on selective etch for GaN devices and applications thereof

Zhang, Yu; Sun, Qian; Han, Jung

Title: Conductivity based on selective etch for GaN devices and applications thereof

Patent · Tue Dec 08 00:00:00 EST 2015

OSTI ID:1228370

Zhang, Yu; Sun, Qian; Han, Jung

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

View Patent

Cite

Export

Save

Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-07NT43227

Assignee:: Yale University

Patent Number(s):: 9,206,524

Application Number:: 13/559,199

OSTI ID:: 1228370

Resource Relation:: Patent File Date: 2012 Jul 26

Country of Publication:: United States

Language:: English

References (12)

Porous silicon photo-device capable of photoelectric conversion Suzuki, Taketoshi; Sakai, Tadashi; Zhang, Li https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5644156 US Patent Document 5,644,156	patent	July 1997
Integrated photoelectrochemical cell and system having a liquid electrolyte Deng, Xunming; Xu, Liwei https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7750234 US Patent Document 7,750,234	patent	July 2010
Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etching Ng, Tuoh-Bin; Crouse, David; Zhu, Zuhua https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20020070125 US Patent Application 09/736056; 20020070125	patent-application	June 2002
Detachable substrate or detachable structure and method for the production thereof Aspar, Bernard; Moriceau, Hubert; Zussy, Marc https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050029224 US Patent Application 10/468223; 20050029224	patent-application	February 2005
Light Emitting Diode With Porous Sic Substrate And Method For Fabricating Li, Ting; Ibbetson, James; Keller, Bernd https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050184307 US Patent Application 10/676953; 20050184307	patent-application	August 2005
Wafer Bonding of Thinned Electronic Materials and Circuits to High Performance Substrate Kub, Francis J.; Hobart, Karl D. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20060199353 US Patent Application 11/164412; 20060199353	patent-application	September 2006
Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color Light Emitting Devices Diana, Frederic S.; David, Aurelien J. F.; Petroff, Pierre M. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070085100 US Patent Application 11/251365; 20070085100	patent-application	April 2007
Semiconductor Light Emitting Device Including Porous Layer Epler, John E.; Krames, Michael R.; Zhao, Hanmin https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070284607 US Patent Application 11/423413; 20070284607	patent-application	December 2007
Porous Particles and Methods of Making Thereof Ferrari, Mauro; Liu, Xuewu; Cheng, Ming-Cheng https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080280140 US Patent Application 12/110515; 20080280140	patent-application	November 2008
Electrolysis transistor Mishra, Umesh; Lai, Rakesh; Shen, Likun https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080296173 US Patent Application 12/156178; 20080296173	patent-application	December 2008
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) Chua, Soo Jin; Hartono, Haryono; Soh, Chew Beng https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090001416 US Patent Application 11/823756; 20090001416	patent-application	January 2009
Porous Substrates, Articles, Systems And Compositions Comprising Nanofibers And Methods Of Their Use And Production Dubrow, Robert; Casillas, Carlos Guillermo; Freeman, William P. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090143227 US Patent Application 11/331445; 20090143227	patent-application	June 2009

Similar Records

Conductivity based on selective etch for GaN devices and applications thereof

Patent · Tue Oct 29 00:00:00 EDT 2019 · OSTI ID:1228370

Zhang, Yu; Sun, Qian; Han, Jung

Luminescence properties of defects in GaN

Journal Article · Tue Mar 15 00:00:00 EST 2005 · Journal of Applied Physics · OSTI ID:1228370

Reshchikov, Michael A; Morkoc, Hadis

Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method

Journal Article · Thu Nov 15 00:00:00 EST 2012 · Materials Research Bulletin · OSTI ID:1228370

Gopalakrishnan, M.; Purushothaman, V.; Venkatesh, P. Sundara; +1 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Conductivity based on selective etch for GaN devices and applications thereof

Citation Formats

References (12)

Similar Records

Related Subjects