Title: Conductivity based on selective etch for GaN devices and applications thereof

Abstract

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Inventors:

Zhang, Yu; Sun, Qian; Han, Jung

Issue Date:

Tue Dec 08 00:00:00 EST 2015

Research Org.:

Yale Univ., New Haven, CT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1228370

Patent Number(s):

9206524

Application Number:

13/559,199

Assignee:

Yale University

Patent Classifications (CPCs):

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25B - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS

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C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25B - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS

C25B1/04 - by electrolysis of water

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS

C25F3/12 - of semiconducting materials

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/025 - {characterised by the substrate}
C30B25/186 - {being specially pre-treated by, e.g. chemical or physical means}
C30B29/406 - {Gallium nitride}
C30B33/10 - in solutions or melts

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B1/02 - made of crystals, e.g. rock-salt, semi-conductors
G02B1/118 - having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
G02B2207/107 - Porous materials, e.g. for reducing the refractive index
G02B5/1861 - {Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
G02B6/29356 - {Interference cavity within a single light guide, e.g. between two fibre gratings
G02B6/29358 - {Multiple beam interferometer external to a light guide, e.g. Fabry-Pérot, etalon, VIPA plate, OTDL plate, continuous interferometer, parallel plate resonator

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02002 - {Preparing wafers}
H01L21/02005 - {Preparing bulk and homogeneous wafers}
H01L21/0237 - {Materials}
H01L21/02458 - {Nitrides}
H01L21/02513 - {Microstructure}
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L21/02658 - {Pretreatments
H01L21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30625 - {With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}
H01L21/30635 - {of AIIIBV compounds}
H01L21/326 - Application of electric currents or fields, e.g. for electroforming
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L33/0025 - {comprising only AIIIBV compounds}
H01L33/0062 - {for devices with an active region comprising only III-V compounds}
H01L33/007 - {comprising nitride compounds}
H01L33/0075 - {comprising nitride compounds}
H01L33/16 - with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L33/32 - containing nitrogen

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E60/36 - Hydrogen production from non-carbon containing sources

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/24997 - Of metal-containing material

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DOE Contract Number:  

FC26-07NT43227

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012 Jul 26

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY