GaTe semiconductor for radiation detection
Patent
·
OSTI ID:968975
- Castro Valley, CA
- Nashville, TN
- Ashland, MA
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Number(s):
- 7,550,735
- Application Number:
- 11/824,094
- OSTI ID:
- 968975
- Country of Publication:
- United States
- Language:
- English
Deep level transient spectroscopy of anisotropic semiconductor GaTe
|
journal | August 1994 |
Anharmonicity in GaTe layered crystals
|
journal | December 2002 |
Similar Records
Current Trends in Gamma Radiation Detection for Radiological Emergency Response
Portable Source Identification Device
Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl3 Perovskite Semiconductor
Conference
·
Thu Sep 01 00:00:00 EDT 2011
· Proceedings of the SPIE
·
OSTI ID:968975
Portable Source Identification Device
Conference
·
Mon Aug 01 00:00:00 EDT 2005
·
OSTI ID:968975
Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl3 Perovskite Semiconductor
Journal Article
·
Mon Jan 25 00:00:00 EST 2021
· Journal of the American Chemical Society
·
OSTI ID:968975
+6 more